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| 1 TC4431 TC4432 1.5A HIGH-SPEED 30V MOSFET DRIVERS FEATURES s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range ............................. 5V to 30V High Capacitive Load Drive Capability ......................... 1000 pF in 25nsec Short Delay Time ................................ <78nsec Typ Low Supply Current -- With Logic "1" Input ................................. 2.5mA -- With Logic "0" Input ................................. 300A Low Output Impedance ....................................... 7 Latch-Up Protected .......... Will Withstand >300mA Reverse Current ESD Protected .................................................... 4 kV GENERAL DESCRIPTION The TC4431/4432 are 30V CMOS buffer/drivers suitable for use in high-side driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7V. Maximum startup VDD bias voltage threshold is 10V. For operation at lower voltages, the LOCK DIS, Pin 3 can be grounded to disable the lockout and start-up circuit. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETS. 2 3 4 5 6 7 6 s s s ORDERING INFORMATION Part No. TC4431COA TC4431CPA TC4431EJA TC4431EOA TC4431EPA Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP Temperature Range 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 40C to +85C Part No. TC4432COA TC4432CPA TC4432EJA TC4432EOA TC4432EPA Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP Temperature Range 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 40C to +85C FUNCTIONAL BLOCK DIAGRAM 8 VDD 3 UV LOCK 2 mA LOCK DIS. Inverted TC4431 OUT OUT 7 INPUT 2 250mV Non-Inverted TC4432 TC4431/32 Inverting/Noninverting GND 4, 5 EFFECTIVE INPUT C = 10pF TC4431/2-8 10/21/96 8 4-257 TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4431 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ............................................................36V Input Voltage (Note 1) ........................ VDD + 0.3V to GND Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 250C/W SOIC RJ-C ..................................................... 75C/W Operating Temperature Range C Version ............................................... 0C to +70C E Version ........................................... - 40C to +85C Package Power Dissipation (TA 70C ) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25C with 5.0 VDD 30V, unless otherwise specified. Symbol Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current (Note 1) High Output Voltage Low Output Voltage Output Resistance (VOL) Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current Start-up Threshold Drop-out Threshold 2.4 -- -1 VDD - 1.0 -- -- -- -- 0.3 -- -- -- -- 0.8 1 V V A V V A A Parameter Test Conditions Min Typ Max Unit 0V VIN VDD (16V MAX) IOUT = 100mA VDD = 30V, IO = 10mA Source: VDD = 30V Sink: VDD = 30V Duty Cycle 2% t 300 sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V VIN = 0V (Note 3) Output VOH VOL RO IPK IREV VDD - 0.8 -- -- 0.025 7 10 3.0 -- 1.5 -- -- -- Switching Time (Note 2) tR tF tD1 tD2 -- -- -- -- -- -- -- 7 25 33 62 78 2.5 0.3 8.4 7.7 40 50 80 90 4 0.4 10 -- nsec nsec nsec nsec mA V V Power Supply IS VS VDO 4-258 TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4432 ELECTRICAL CHARACTERISTICS (Cont.): Symbol Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current (Note 1) 2.4 -- -1 VDD - 1.2 -- -- -- -- -- -- -- -- -- 7 -- -- -- -- -- -- -- -- -- -- -- -- 8.4 7.7 -- 0.8 1 -- 0.025 12 60 70 100 110 6 0.7 10 -- V V A V V nsec nsec nsec nsec mA V V 1 Specifications measured over operating temperature range with 5.0V VDD 30V, unless otherwise specified. Min Typ Max Unit Parameter Test Conditions 2 3 4 5 6 7 0V VIN VDD (16V MAX) IOUT = 100mA VDD = 30V, IO = 10mA Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V VIN = 0V (Note 3) Output VOH High Output Voltage VOL Low Output Voltage RO Output Resistance Switching Time (Note 2) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS VS VDO Power Supply Current Start-up Threshold Drop-out Threshold NOTES: 1. For inputs >16V, add a 1k resistor in series with the input. See graph on page 4 for input current. 2. Switching times are guaranteed by design. 3. For operation below 7V, the LOCK DIS., Pin 3 can be grounded to disable the lockout and start-up circuit. PIN CONFIGURATIONS VDD 1 IN 2 LOCK DIS 3 GND 4 8 VDD 7 OUT VDD 1 IN 2 LOCK DIS 3 GND 4 7 8 VDD 7 OUT TC4431 6 OUT 5 GND 7 6 TC4432 6 OUT 5 GND 2 2 INVERTING 6 NONINVERTING NOTE: SOIC pinout is identical to DIP. 8 TELCOM SEMICONDUCTOR, INC. 4-259 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4431 +5V INPUT 0V VDD 90% 10% tD1 90% VDD= 30V 4.7 F 0.1 F tF tD2 tR 90% OUTPUT 1, 8 7 INPUT 2 6 0V OUTPUT 10% 10% CL = 1000 pF Inverting Driver LOCK DIS. 3 +5V INPUT 90% 4, 5 0V VDD 10% 90% 90% tD2 10% INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec tD1 OUTPUT 0V 10% tR tF Noninverting Driver Figure 1. Switching Time Test Circuit TYPICAL CHARACTERISTICS Supply Current vs. Capacitive Load 60 VDD = 12V 50 ISUPPLY (mA) 150 2 MHz Rise/Fall Time vs. VDD CLOAD = 1000pf at 25 C TF 125 100 75 50 25 0 10,000 30 900 kHz 20 10 0 100 200 kHz 20 kHz 1000 CLOAD (pF) 600 kHz Time (nsec) 40 TR 3 6 9 12 15 18 21 VDD (VOLTS) 24 27 30 Input Current vs. Input Voltage 50 45 40 Input Curent (mA) 300 250 TD1 200 150 TD2 TD1 and TD2 Delay vs. VDD CLOAD = 1000pf at 25 C 35 30 25 20 15 10 5 0 3 6 9 12 15 18 21 Input Voltage (VIN) 24 27 30 WITH 1K RES. WITHOUT 1K RES. Time (nsec) 100 50 0 3 6 9 12 15 18 21 VDD (VOLTS) 24 27 30 4-260 TELCOM SEMICONDUCTOR, INC. |
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